N-Channel Power MOSFET 50V, 30A, 40mΩ

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Overview

This is an N-Channel enhancement mode silicon gate power MOSFET designed for applications such asswitching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingtransistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits.Formerly developmental type TA9771.

  • TBA

  • 30A, 50V
  • RDS(ON)= 0.040Ω
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Majority Carrier Device
  • Related Literature- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

BUZ11-NR4941

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CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

Y

N-Channel

PowerTrench® T1

TO-220

Small Signal

Standard

0

Single

0

50

40

±20

2

30

75

-

-

-

7

1500

-

250

750

250

$0.4583

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