N-Channel Logic Level Enhancement Mode Field Effect Transistor 50 , 210mA, 3.5Ω

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Overview

This N-Channel enhancement mode MOSFET. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.The BSS138W is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

  • This product is general usage and suitable for many different applications.
  • RDS(ON) = 3.5 Ω @ VGS = 10V, ID = 0.22A
  • RDS(ON) = 6.0 Ω @ VGS = 4.5V, ID = 0.22A
  • High density cell design for extremely low RDS(ON).
  • Rugged and Reliable.
  • Compact industry standard SOT-323 surface mount package.

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

BSS138W

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Active

CAD Model

Pb

A

H

P

SC-70-3 / SOT-323-3

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SC-3

Small Signal

Logic

0

Single

0

50

3500

±20

1.5

0.21

0.34

-

6000

-

0.65

38

0.22

-

5.9

3.5

$0.0548

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