N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 220mA, 3.5Ω

Obsolete

Overview

These N-Channel enhancement mode field effect tran sistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while pro vide rugged, reliable, and fast switching perfor mance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and otherswitching applications.

  • General Low Voltage and Low Current Application
  • Small Servo Motor Control
  • Power MOSFET Gate Drivers
  • General Switching Applications

  • 0.22 A, 50 V
     RDS(ON) = 3.5Ω @ VGS = 10 V
     RDS(ON) = 6.0Ω @ VGS = 4.5 V
  • High density cell design for extremely low RDS(ON)
  • Rugged and Reliable
  • Compact industry standard SOT-23 surface mount package

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

BSS138-F085

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Obsolete

CAD Model

Pb

A

H

P

SOT-23-3

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SOT-23-3

Small Signal

Logic

0

Single

0

60

3500

±20

1.5

0.22

0.36

-

6000

-

2.4

27

0.4

-

13

6

Price N/A

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