Dual N-Channel Enhancement Mode Field Effect Transistor 50V, 0.51A, 2Ω

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Overview

These dual N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These devices is particularly suited for low voltage applications requiring a low current high side switch.

  • This product is general usage and suitable for many different applications.

  • 0.51 A, 50 V.   RDS(ON) = 2 Ω @ VGS = 10 V.
  • High density cell design for extremely low RDS(ON).
  • Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
  • High saturation current.

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDC7002N

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CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

NA

0

50

Q1: 2000, Q2: 2000

20

2.5

0.51

0.96

-

Q1: 4000, Q2: 4000

-

1

20

0.33

-

13

5

$0.1259

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