Power MOSFET, P-Channel, QFET®, -200 V, -11.5 A, 470 mΩ, TO-220

Last Shipments

Overview

This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

  • Other Audio & Video

  • -11.5A, -200V, RDS(on) = 470mΩ(Max.) @VGS = -10 V, ID = -5.75A
  • Low gate charge ( Typ. 31nC)
  • Low Crss ( Typ. 30pF)
  • 100% avalanche tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQP12P20

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

1000

N

P-Channel

PowerTrench® T1

TO-220

Small Signal

Standard

0

Single

0

-200

470

±30

-5

-11.5

120

-

-

-

31

920

16

1440

190

30

Price N/A

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