N-Channel PowerTrench® MOSFET 150V 1.6A, 261mΩ

Active

Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

  • This product is general usage and suitable for many different applications.
  • PD Switch

  • Max rDS(on) = 261 mΩ at VGS = 10 V, ID = 1.6 A
  • Max rDS(on) = 359 mΩ at VGS = 6 V, ID = 1.4 A
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package
  • Fast Switching Speed
  • 100% UIL Tested
  • RoHS Compliant

Tools and Resources

Product services, tools and other useful resources related to FDN86246

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDN86246

Loading...

Active

CAD Model

Pb

A

H

P

SOT-23-3

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

SOT-23

Small Signal

Standard

0

Single

0

150

261

±20

4

1.6

1.5

-

-

-

1.6

168

0.8

29

21

1.6

$0.4457

More Details

Show More

1-25 of 25

Products per page

Jump to :

Support on the go

Find and compare products, get support and connect with onsemi sales team.