Small Signal MOSFETs | FDG313N

N-Channel Digital FET 25V, 0.95A, 0.45Ω

Obsolete

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Overview

This N-Channel enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.

  • This product is general usage and suitable for many different applications.

  • 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V. RDS(on) = 0.60 Ω @ VGS = 2.7 V.
  • Low gate charge (1.64 nC typical)
  • Very low level gate drive requirements allowing directoperation in 3V circuits (VGS(th)1.5V).
  • Gate-Source Zener for ESD ruggedness(6kV Human Body Model).
  • Compact industry standard SC70-6 surface mountpackage.

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDG313N

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419AD

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Single

0

25

-

8

1.5

0.95

0.75

NA

620

-

1.64

NA

-

-

-

-

Price N/A

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