Name: Integrated N-Channel PowerTrench ® MOSFET and Schottky Diode 30V , 4A, 56mΩ
Brand: Integrated N-Channel PowerTrench ® MOSFET and Schottky Diode 30V , 4A, 56mΩ
SKU: FDFS6N754

Integrated N-Channel PowerTrench^® MOSFET and Schottky Diode 30V , 4A, 56mΩ

Obsolete

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Overview

The FDFS6N754 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

This product is general usage and suitable for many different applications.

Max r_DS(on) = 56mΩ at V_GS = 0V, I_D= 4A
Max r_DS(on) = 75mΩ at V_GS= 4.5V, I_D = 3.5A
V_F 0.45V @ 2A
V_F 0.28V @ 100mA
Schottky and MOSFET incorporated into single powersurface mount SO-8 package
Electrically independent Schottky and MOSFET pinoutfor design flexibility
Low Gate Charge (Q_g = 4nC)
Low Miller Charge

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V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

V_GS Max (V)

V_gs(th) Max (V)

I_d Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Q_gd Typ @ V_GS = 4.5 V (nC)

Q_rr Typ (nC)

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C_rss Typ (pF)

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FDFS6N754

Obsolete

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Small Signal MOSFETs | FDFS6N754

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