Small Signal MOSFETs | FDD6635

N-Channel PowerTrench® MOSFET, 35V, 59A, 10mΩ

Obsolete

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Overview

This N-Channel MOSFET has been produced using a proprietary PowerTrench® technology to deliver low RDS(on) and optimized BVdss capability to offer superior performance benefit in the applications.

  • This product is general usage and suitable for many different applications.

  • 59 A, 35V
  • Max RDS(ON) = 10 mΩ@ VGS = 10 V
  • Max RDS(ON) = 13 mΩ@ VGS= 4.5 V
  • Fast Switching
  • RoHS compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD6635

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

TO-252-3

Small Signal

Logic

0

Single

0

35

10

20

3

59

55

-

13

-

26

1400

-

-

-

-

Price N/A

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Reliability Data

Die Related Summary Data

Device: FDD6635

Equivalent to wafer fab process: TV

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TV

0

1399545734

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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