SI4532DY: Dual N & P Channel Enhancement Mode Field Effect Transistor

Datasheet: Dual N- and P-Channel Enhancement Mode Field Effect Transistor
Rev. 3 (377kB)
Product Overview
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Product Change Notification
These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
 
  • P-Channel
     -3.5 A,-30V
     RDS(ON) = 0.085 Ω @ VGS = -10V
     RDS(ON) = 0.190 Ω @ VGS = -4.5V
  • N-Channel
     3.9 A, 30V
     RDS(ON) = 0.065 Ω @ VGS = 10V
     RDS(ON) = 0.095 Ω @ VGS = 4.5V
  • High power and current handling capability in a widely used surface mount package
  • High density cell design for extremely low RDS(ON)
  • Dual (N & P-Channel) MOSFET in surface mountpackage
Applications
  • This product is general usage and suitable for many different applications.
Technical Documentation & Design Resources
Application Notes (12) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
SI4532DY Active
Pb-free
Halide free
SI4532DY SOIC-8 751EB 1 260 Tape and Reel 2500 $0.434
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
SI4532DY  
 $0.434 
Pb
H
 Active   
Complementary
Dual
±30
-20
±3
-3.5
2
-
0.19
N:95,P:190
0.19
N:65,P:85
-
5
N: 235, P: 420
SOIC-8
Case Outlines
751EB   
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