NVMYS029N08LH: MOSFET - Power, Single N-Channel, 80 V, 29 mΩ, 22 A

Datasheet: MOSFET - Power, Single N-Channel
Rev. 0 (214kB)
Product Overview
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Product Change Notification
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. Gullwing device to achieve improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Features   Benefits
     
  • Small Footprint (5x6mm)
 
  • Compact Design
  • Low RDS(on)
 
  • Minimize Conduction Losses
  • Low QG and Capacitance
 
  • Minimize Driver Losses
  • Gull-wings leads for an improved BLR performance
 
  • Enhance Optical Inspection
  • These Devices are Pb−Free and are RoHS Compliant
 
  • Automotive Qualified
  • AEC−Q101 Qualified and PPAP Capable
   
Applications   End Products
  • Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
  • Switching power supplies
  • 48V systems
 
  • Motor Control
  • DC/DC converter
  • Load Switch
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NVMYS029N08LHTWG Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVMYS029N08LH, LFPAK4 (Pb−Free) LFPAK-4 760AB 1 260 Tape and Reel 3000 $0.6797
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NVMYS029N08LHTWG  
 $0.6797 
Pb
A
H
P
 Active   
N-Channel
Single
80
±20
2
22
33
38
29
4
9
431
LFPAK-4
Case Outlines
760AB   
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