Power MOSFET, N-Channel, 80 V, 1.27 mΩ, Bare Die

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Overview

NVCR4LS1D3N08M7A is a 80 V 1.27 mΩ Automotive Power MOSFET Bare die with a die size of 6.604 mm x 3.683 mm. It can be used to build power module with Al wirebonding. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

  • Switching Power Supplies
  • Power switches (High side driver, Low side driver, H-Bridges, etc)
  • Reverse Battery protection
  • Solenoid driver - ABS, Fuel injection
  • Motor Control - WPS, Wipers, Fans, Seats, etc.
  • Load Switch - ECU, Chassis, Body
  • Low RDS(on)
  • Low QG and Capacitance
  • AEC−Q101 Qualified and PPAP Capable

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NVCR4LS1D3N08M7A

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Active

CAD Model

Pb

A

H

P

-

-

NA

0

MTFRM

1

F

80

1.27

N-Channel

Single

20

4

371

429

~NA~

~NA~

~NA~

172

12800

Price N/A

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