NVC6S5A354PLZ

P-Channel Power MOSFET, -60V, -4A, 100mΩ

Overview

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.

Applications

Reverse Battery Protection
High Side Load Switch

End Products

Head Light Unit
DC-DC Module

Features

Low On-Resistance
High ESD protection HBM:H1C, CDM:C5
RoHS compliance
4V drive

Material Composition

Product Change Notification

Product List

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NVC6S5A354PLZT1G

Last Shipments

CPH-6

318BD

260

REEL

3000

-60

100

P-Channel

Single

-2.6

-4

1.9

135

600

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | NVC6S5A354PLZ

P-Channel Power MOSFET, -60V, -4A, 100mΩ

Overview

Product List

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