NVBG095N65S3F: Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 36 A, 95 mΩ, D2PAK 7 lead

Datasheet: MOSFET - Power, Single N-Channel, D2PAK-7L
Rev. 1 (230kB)
Product Overview
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SUPERFET® III MOSFET is ON Semiconductor’s high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional components and improve system reliability.

In addition, the D2PAK 7 lead package offers Kelvin sense. This allows higher switching speeds and gives designers the ability to reduce the overall application footprint.

Features   Benefits
     
  • Best in Class body diode
 
  • Lower over shoot during reverse recovery
  • Internal Rg
 
  • Low switching noise
  • Lower RDS(ON) / Same Packages
 
  • High System Reliability
  • Lower FOM (RDS(ON) max. X Qg typ. & RDS(ON) max. X Eoss)
 
  • Ease of use for fast design-in
  • Internal Zener / 650V BV dss
 
  • Low EMI & High Power Density
Applications   End Products
  • OBC
  • HV DC/DC converter
 
  • On Board Charger
  • DC/DC Converter
Technical Documentation & Design Resources
Simulation Models (3) Data Sheets (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NVBG095N65S3F Active 
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVBG095N65S3F, SuperFET III 650V 95mohm D2PAK 7 Lead D2PAK7 (TO-263-7L HV) 1 260 Tape and Reel 800 $3.3972
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NVBG095N65S3F  
 $3.3972 
Pb
A
H
P
 Active   
N-Channel
Single
650
30
5
36
272
95
66
3020
D2PAK7 (TO-263-7L HV)
Case Outlines
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