NTTFS030N10G: MOSFET Power, Single N-Channel, μ8FL, 100V, 30mΩ, 35A

Datasheet: MOSFET - Power, SIngle N-Channel, u8FL
Rev. 0 (213kB)
Product Overview
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MOSFET Power, Single N-Channel, μ8FL, 100V, 30mΩ, 35A
Features   Benefits
     
  • Avalanche Energy Specified
 
  • Rugged technology for utmost reliability
  • Specifically designed for Wide SOA applications from a 48V Bus
 
  • Hot Swap tolerant with superior SOA curve than std mosfet
  • These Devices are Pb−Free, Halogen−Free / BFR−Free and are RoHS Compliant
 
  • ROHS compliant
  • Low RDS(on) to Minimize Conduction Losses
 
  • reduces conduction Loss
  • High Peak UIS Current Capability for Ruggedness
   
  • Small Footprint (8x8 mm) & Top Metal Cooling
   
Applications   End Products
  • Converters
  • Power Supplies
  • 48V Hot Swap
 
  • 48V Telecom equipment
  • 48V Server equipment
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTTFS030N10GTAG Active
Pb-free
Halide free
NTTFS030N10G, MOSFET Power, Single N-Channel, μ8FL, 100V, 30mΩ, 35A WDFN-8 511DY 1 260 Tape and Reel 1500 $0.542
Market Leadtime (weeks) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 36,000

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTTFS030N10GTAG  
 $0.542 
Pb
H
 Active   
N-Channel
Single
100
20
4
35
75
30
20.3
1436
WDFN-8
Case Outlines
511DY   
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