MOSFETs | NTMTS1D2N08H

Single N-Channel Power MOSFET 80V, 335A, 1.1mΩ, PQFN 8x8

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Overview

This N-Channel T8 80V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.

  • Motor Control
  • DC-DC Converters
  • Battery Management/Protection
  • Power Steering/ Load Switch
  • Power Tools, E-Scooters, Drones
  • Battery Packs/ Energy Storage Units
  • Telecom, Netcom
  • Power Supplies
  • Very Low RDS(on), Shielded Gate Trench Technology
  • Low Profile PQFN 8x8 package
  • Maximum junction temperature of 175C
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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NTMTS1D2N08H

Active

Pb

A

H

P

DFNW-8

507AP

1

260

REEL

3000

Y

N-Channel

Single

80

20

4

335

5

"-"

"-"

1.1

"-"

147

10100

$3.2593

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