NTMTS002N08MC: Single N-Channel Power MOSFET 80V, 229A, 2.0mΩ, PQFN 8x8

Datasheet: MOSFET - Power, Single N-Channel, 80 V, 2 mOhms, 229 A
Rev. 1 (304kB)
Product Overview
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Product Change Notification
This N-Channel PTNG 80V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.
Features   Benefits
     
  • Very Low RDS(on), Shielded Gate Trench Technology
 
  • Minimize conduction losses
  • Low Profile PQFN 8x8 package
 
  • High peak current and low parasitic inductance
  • Maximum junction temperature of 175C
 
  • Offers a wider design margin for thermally challenged applications
  • Soft Body diode with low Qrr
 
  • Reduces switching spike
  • RoHS Compliant
   
Applications   End Products
  • Motor Control
  • DC-DC Converters
  • Battery Management/Protection
  • Power Steering/ Load Switch
 
  • Power Tools, E-Scooters, Drones
  • Battery Packs/ Energy Storage Units
  • Telecom, Netcom
  • Power Supplies
Technical Documentation & Design Resources
Data Sheets (1) Package Drawings (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTMTS002N08MC Active
Pb-free
Halide free
NTMTS002N08MC DFNW-8 507AP 1 260 Tape and Reel 3000 $2.672
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTMTS002N08MC  
 $2.672 
Pb
H
 Active   
N-Channel
Single
80
20
4
229
3.3
"-"
"-"
2
"-"
89
6350
DFNW-8
Case Outlines
507AP   
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