MOSFET, Power Source Down, 30V Single N-Channel

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Overview

MOSFET, Power Source-Down Technology, 30V Single N-Channel, 1mΩ, 275A, 121W, WDFN9 5x6mm

  • DC-DC Converters
  • Secondary Rectification
  • ORing
  • POL
  • Battery Management
  • Server, Telecom, High End Computing
  • Low RDS(on) with Source-Down Technologies
  • Low QG and Capacitance
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTMFSS0D9N03P8

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CAD Model

Pb

A

H

P

TDFN9 5x6, 1.27P

1

260

REEL

3000

N

30

1

N-Channel

Single

±20

3

275

121

N/A

1.2

64

133

9210

$0.8666

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