Power MOSFET, 60V N Channel 235A 1.5m Ohm in Dualcool56 package

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Overview

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

  • Synchronous Rectifier in AC-DC and DC-DC power supplies
  • Motor Switch
  • Load switch
  • Power Supplies
  • Motor control
  • Solar Inverters
  • Motor Control
  • Top and bottom sided exposed in standard 5x6mm pin-out
  • Ultra low RDS-on
  • Reduced capacitances and package inductance

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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NTMFSC1D6N06CL

Active

Pb

A

H

P

DFN-8

1

260

REEL

3000

Y

N-Channel

Single

60

20

2

235

3.8

"-"

2.3

1.5

41

91

6660

$2.996

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