N-Channel Dual CoolTM 56 PowerTrench® MOSFET 120 V, 92 A, 6.0mΩ

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Overview

This N-Channel MOSFET is produced using onsemi’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

  • AC-DC Merchant Power Supply
  • Primary DC-DC FET
  • Synchronous Rectifier
  • DC-DC conversion
  • Primary DC-DC FET
  • Synchronous Rectifier
  • DC-DC conversion
  • Dual Cool™ Top Side Cooling PQFN package
  • Max rDS(on) = 6.1 mΩ at VGS = 10 V, ID = 44 A
  • High performance technology for extremely low rDS(on)
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

ECAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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NTMFSC006N12MC

Active

Pb

A

H

P

DFN-8

1

260

REEL

3000

N

N-Channel

Single

120

20

4

92

104

~NA~

~NA~

6.1

~NA~

24.3

3040

$1.0906

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