NTMFSC006N12MC: N-Channel Dual CoolTM 56 PowerTrench® MOSFET 120 V, 92 A, 6.0mΩ

Datasheet: MOSFET - Power, Dualcool N-Channel, PQFN8
Rev. 2 (282kB)
Product Overview
View Material Composition
Product Change Notification
This N-Channel MOSFET is produced using onsemi’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Features   Benefits
     
  • Dual Cool™ Top Side Cooling PQFN package
 
  • High effciency, low switching loss
  • Max rDS(on) = 6.1 mΩ at VGS = 10 V, ID = 44 A
 
  • high power density
  • High performance technology for extremely low rDS(on)
 
  • better reverse recovery performance
  • 100% UIL Tested
   
  • RoHS Compliant
   
Applications   End Products
  • AC-DC Merchant Power Supply
  • Primary DC-DC FET
  • Synchronous Rectifier
  • DC-DC conversion
 
  • Primary DC-DC FET
  • Synchronous Rectifier
  • DC-DC conversion
Technical Documentation & Design Resources
Application Notes (12) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTMFSC006N12MC Active
Pb-free
Halide free
NTMFSC006N12MC, MOSFET - Power, Dualcool N-Channel, PQFN8, 120V, 6.1mΩ, 92A DFN-8 506EG 1 260 Tape and Reel 3000 $1.0906
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTMFSC006N12MC  
 $1.0906 
Pb
H
 Active   
N-Channel
Single
120
20
4
92
104
6.1
24.3
3040
DFN-8
Case Outlines
506EG   
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