MOSFETs | NTH4L027N65S3F

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 75 A, 27.4 mΩ, TO-247 4lead

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Overview

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS
  • 700 V @ TJ = 150 °C
  • Ultra Low Gate Charge (Typ. Qg = 259 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)
  • Excellent body diode performance (low Qrr, robust body diode)
  • Optimized Capacitance
  • Kelvin contact
  • RoHS Compliant
  • 100% Avalanche Tested
  • Typ. RDS(on) = 23 mΩ

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Package Type

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MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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NTH4L027N65S3F

Active, Not Rec

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

N

N-Channel

Single

650

30

5

75

595

~NA~

~NA~

27.4

~NA~

259

7690

$12.9435

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