NTBS2D7N06M7

Power MOSFET, N-Channel, Standard Gate, 60 V, 110 A, 2.7 mΩ

Overview

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Applications

Industrial Motor Drive
Industrial Power Supply
Industrial Automation
Battery Operated Tools
Battery Protection
Solar Inverters
UPS and Energy Inverters
Energy Storage
Load Switch

End Products

Fork Lifts, Multi Rotor Drones, Power Tools
Power Supplies
Battery Packs and Chargers
Power Optimizers

Features

Low Qrr
Soft recovery body diode
Low RDS(on)
RoHS compliant
UIS Capability

Material Composition

Product Change Notification

Product List

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NTBS2D7N06M7

Active

D2PAK-3 / TO-263-2

418AJ

245

REEL

800

2.7

N-Channel

Single

±20

110

176

110

6655

$3.2929

Product Number:

Distributor		Stock	BUY

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MOSFETs | NTBS2D7N06M7

Power MOSFET, N-Channel, Standard Gate, 60 V, 110 A, 2.7 mΩ

Overview

Product List

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