NDS7002A

N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 5Ω

Overview

This N-Channel enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Applications

This product is general usage and suitable for many different applications.

Features

High density cell design for extremely low R_DS(ON).
Voltage controlled small signal switch.
Rugged and Reliable.
High saturation current capability.

Material Composition

Product Change Notification

Product List

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NDS7002A

Active

SOT-23 (TO-236)

318

260

REEL

3000

2000

N-Channel

Single

±20

2.5

0.28

3000

0.6

$0.0413

NDS7002A-F169

Last Shipments

SOT-23 (TO-236)

318

260

REEL

3000

2000

N-Channel

Single

±20

2.5

0.28

3000

0.6

Price N/A

Product Number:

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MOSFETs | NDS7002A

N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 5Ω

Overview

Product List

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