P-Channel Enhancement Mode Field Effect Transistor -60V, -0.18A, 5Ω

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Overview

This P-Channel enhancement mode power field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0605 can be used, with a minimum of effort, in most applications requiring up to 0.18A DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.

  • This product is general usage and suitable for many different applications.
  • -0.18 A, -60 V. RDS(ON) = 5 Ω @ VGS= -10 V.
  • Voltage controlled p-channel small signal switch.
  • High density cell design for extremely low RDS(ON).
  • High saturation current.

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2

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDS0605

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Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

NA

0

-60

5000

±20

-3

-0.18

0.36

-

7500

-

1.8

79

51

-

1130

380

$0.0357

More Details

NDS0605-F169

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Last Shipments

CAD Model

Pb

A

H

P

SOT-23-3

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23-3

Small Signal

Logic

0

NA

0

-60

5000

±20

-3

-0.18

0.36

-

7500

-

1.8

79

51

-

1130

380

Price N/A

More Details

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