NDB6030PL

P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -30A, 42mΩ

Overview

These P-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Applications

This product is general usage and suitable for many different applications.

Features

-30 A, -30 V
R_DS(ON) = 0.042 Ω @ V_GS= -4.5 V
R_DS(ON) = 0.025 Ω @ V_GS= -10 V
Critical DC electrical parameters specified at elevated temperature
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
High density cell design for extremely low R_DS(ON)
175°C maximum junction temperature rating

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NDB6030PL

Obsolete

D2PAK-3 / TO-263-2

418AJ

260

REEL

800

-30

P-Channel

Single

-3

-30

1570

Price N/A

Product Number:

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MOSFETs | NDB6030PL

P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -30A, 42mΩ

Overview

Product List

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