MMBF170: N-Channel Enhancement Mode Field Effect Transistor

Datasheet: Field Effect Transistor - N-Channel, Enhancement Mode
Rev. 6 (736kB)
Product Overview
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Product Change Notification
This N-Channel enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
 
  • High density cell design for low RDS(ON)
  • Voltage controlled small signal switch
  • Rugged and reliable
  • High saturation current capability
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
MMBF170 Active
Pb-free
Halide free
MMBF170 SOT-23-3 318-08 1 260 Tape and Reel 3000 $0.0447
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
MMBF170  
 $0.0447 
Pb
H
 Active   
N-Channel
Single
60
±20
3
0.5
0.3
-
-
5
5
5000
-
0.65
24
SOT-23-3
Case Outlines
318-08   
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