N-Channel Enhancement Mode Field Effect Transistor

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Overview

This N-Channel enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

  • This product is general usage and suitable for many different applications.
  • High density cell design for low RDS(ON)
  • Voltage controlled small signal switch
  • Rugged and reliable
  • High saturation current capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

MMBF170

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Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236)

1

260

REEL

3000

N

60

5000

N-Channel

Single

±20

3

0.5

0.3

-

5

-

0.65

24

$0.0387

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