Power MOSFET, -100V, 275mΩ, -11A, Single P-Channel

Obsolete

Overview

This P-Channel Power MOSFET is produced using onsemi’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.

  • Reverse Battery Protection
  • Load Switch

  • Low On-Resistance
  • 4V drive
  • 100% Avalanche Tested
  • ESD Diode-Protected Gate
  • Pb-Free, Halogen Free and RoHS compliance

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

SFT1345-TL-H

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

700

N

P-Channel

PowerTrench® T1

DPAK-4

Low-Medium Voltage

Logic

0

Single

0

-100

275

20

-2.6

-11

35

-

315

-

21

1020

3.6

-

72

43

Price N/A

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