Low/Medium Voltage MOSFETs | NVMYS1D6N04CL

Power MOSFET 40V, 1.07 mΩ, 280 A, Single N−Channel

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Overview

Product PreviewPower MOSFET 40V, 1.07 mΩ, 280 A, Single N−Channel

  • Reverse Battery protection
  • Switching power supplies
  • Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

  • Solenoid Driver – ABS, Fuel injection
  • Motor Control – EPS, Wipers, Fans, Seats, etc.
  • Load Switch – ECU, Chassis, Body

  • Small Footprint (8x8 mm)
  • Low RDS(on)
  • Low QG and Capacitance
  • New Power 88 Package
  • AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free and are RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NVMYS1D6N04CLT1G

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NVMYS1D6N04CLTWG

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Active, Not Rec

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Reliability Data

Die Related Summary Data

Device: NVMYS1D6N04CLT1G

Equivalent to wafer fab process: TRENCH FET

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TRENCH FET

10

8953674244

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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