Low/Medium Voltage MOSFETs | NVD5890NL

Power MOSFET 40V, 123A, 3.7 mOhm, Single N Channel, DPAK, Logic Level.

Obsolete

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Overview

Automotive Power MOSFET. 40V, 123A, 3.7 mOhm, Single N Channel, DPAK, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

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MSL Type

MSL Temp (°C)

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Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NVD5890NLT4G

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

DPAK-3

Low-Medium Voltage

Logic

0

Single

0

40

3.7

20

2.5

123

107

-

5.5

42

74

4760

18.8

34

580

385

Price N/A

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Reliability Data

Die Related Summary Data

Device: NVD5890NLT4G

Equivalent to wafer fab process: TRENCH FET LEGACY

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TRENCH FET LEGACY

2

15086608915

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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