Low/Medium Voltage MOSFETs | NVD2955

Power MOSFET -60V, -12A, 180 mOhm, Single P-Channel, DPAK.

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Overview

Automotive Power MOSFET designed to withstand high energy in the Avalanche and Commutation Modes. Designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

  • Low Voltage and High Speed Switching Applications in power supplies, converters, and power motor controls.

  • Avalanche Energy Specified
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Designed for Low Voltage, High Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
  • AEC−Q101 Qualified and PPAP Capable
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NVD2955T4G

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Similar Products
CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Standard

0

Single

0

-60

180

20

-4

-12

55

-

-

-

15

500

7

100

150

50

Price N/A

More Details

SVD2955T4G

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Active

CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

Y

P-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Standard

0

Single

0

-60

180

20

-4

-12

55

-

-

-

15

500

-

-

-

-

$0.5874

More Details

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Reliability Data

Die Related Summary Data

Device: NVD2955T4G

Equivalent to wafer fab process: TMOS 7

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TMOS 7

0

1220062755

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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