Low/Medium Voltage MOSFETs | NVCW4LS001N08HA

Power MOSFET, N-Channel, 80 V, 1.0 mΩ, Bare Die

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Overview

NVCW4LS001N08HA is a 80 V 1.0 mΩ Automotive Power MOSFET Bare die with a die size of 6.604 mm x 4.445 mm. It can be used to build power module with Al wirebonding. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

  • Switching Power Supplies
  • Power switches (High side driver, Low side driver, H-Bridges, etc)
  • 48 V Systems

  • Motor Control
  • DC/DC Converter
  • Load Switch

  • Low RDS(on)
  • Low QG and Capacitance
  • AEC−Q101 Qualified and PPAP Capable

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NVCW4LS001N08HA

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Active

CAD Model

Pb

A

H

P

-

-

NA

0

MTFRM

1

F

N-Channel

PowerTrench® T8

Bare Die

Low-Medium Voltage

Standard

0

Single

0

80

1

20

4

351

311

~NA~

~NA~

~NA~

166

11200

~NA~

234

1600

49

$3.1999

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