Low/Medium Voltage MOSFETs | NTTFSSH4D0N08XL

MOSFET - PowerTrench® T10, Single, N-Channel, Source Down, Power33, 80 V, 3.6 mΩ, 107 A

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Overview

The latest 80V logic gate level power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. smaller peak reverse recovery current with good softness behavior can perform lower voltage spike with better EMI performance.
This product is an improved 3x3 source-down GEN2 package product, this has better thermal performance than previous 3x3 source down package with high thermal conductivity mold compound to achieve TC-55°C to +175°C

  • High Switching Frequency DC−DC Conversion
  • Synchronous Rectifier

  • Cloud system
  • Datacenter / IBC
  • Power Supply Unit

  • Advanced Source−Down Package Technology (3.3 x 3.3 mm)
  • Ultra Low RDS(on)
  • Low QG and Capacitance

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MSL Type

MSL Temp (°C)

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Package Name

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Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTTFSSH4D0N08XLTWG

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CAD Model

Pb

A

H

P

WDFN9 3.3x3.3, 0.65P

511EB

1

260

REEL

3000

F

N-Channel

PowerTrench® T10

Power 33 Source Down

Low-Medium Voltage

Logic

0

Single

0

80

3.6

20

2.1

107

102

~NA~

5.3

19

40

2520

~NA~

109

630

20

Price N/A

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