Name: MOSFET - PowerTrench® T10, Single, N-Channel, Source Down, WDFN9, 25 V, 0.72 mΩ, 276 A
Brand: MOSFET - PowerTrench® T10, Single, N-Channel, Source Down, WDFN9, 25 V, 0.72 mΩ, 276 A
SKU: NTTFSSH0D7N02X

MOSFET - PowerTrench® T10, Single, N-Channel, Source Down, WDFN9, 25 V, 0.72 mΩ, 276 A

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Overview

The latest 25V power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. smaller peak reverse recovery current with good softness behavior can perform lower voltage spike with better EMI performance.

This product is an improved 3x3 source-down GEN2 package product, this has better thermal performance than previous 3x3 source down package with high thermal conductivity mold compound to achieve TC-55°C to +150°C

High Switching Frequency DC−DC Conversion
Synchronous Rectifier

Cloud system
Datacenter / IBC
Power Supply Unit

Advanced Source−Down Package Technology (3.3x3.3mm)
Ultra Low RDS(on)
Low QG and Capacitance

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Wide SOA Mosfets

Configuration

OPN in older Technology

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

V_gs (V)

V_gs(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Q_gd Typ @ V_GS = 4.5 V (nC)

Q_rr Typ (nC)

C_oss Typ (pF)

C_rss Typ (pF)

Reference Price

NTTFSSH0D7N02X

Active, New

WDFN9 3.3x3.3, 0.65P

511EB

260

REEL

3000

N-Channel

PowerTrench® T10

Power 33 Source Down

Low-Medium Voltage

Logic

Single

0.72

2.1

276

~NA~

0.92

4510

5.6

110

1190

135

$0.9325

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Low/Medium Voltage MOSFETs | NTTFSSH0D7N02X

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