Low/Medium Voltage MOSFETs | NTTFS4C02N

Single N−Channel Power MOSFET 30V, 170A, 2.25mΩ

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Overview

Power MOSFET
30 V, 170 A, Single N−Channel, 8FL

  • DC-DC Converters
  • Power Load Switch
  • Notebook Battery Management

  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTTFS4C02NTAG

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CAD Model

Pb

A

H

P

WDFN-8 / u8FL

511AB

1

260

REEL

1500

Y

N-Channel

PowerTrench® T6

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

30

2.25

20

2.2

170

91

-

3.1

11.6

45

2980

4

28

1200

55

$0.1762

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Reliability Data

Die Related Summary Data

Device: NTTFS4C02NTAG

Equivalent to wafer fab process: TRENCH FET

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TRENCH FET

10

8953674244

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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