Low/Medium Voltage MOSFETs | NTTFS115P10M5

Power MOSFET, P Channel, -100V, -13 A, 120mΩ

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Overview

Power MOSFET, P Channel, -100V, -13 A, 120mΩ

  • Load Switches
  • DC Motor Control
  • DC−DC Conversion

  • Isolated DC-DC converters

  • Low RDS(on)
  • Fast Switching
  • Industry standard compact 3x3mm package
  • These Devices are Pb−Free and are RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTTFS115P10M5

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CAD Model

Pb

A

H

P

WDFN-8

511DH

1

260

REEL

3000

Yes

P-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

-100

120

±20

-4

-13

0.9

-

-

-

9.2

637

1.3

87.6

93.5

4.5

$0.3187

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Reliability Data

Die Related Summary Data

Device: NTTFS115P10M5

Equivalent to wafer fab process: T7

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

T7

11

6351322491

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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