Power MOSFET, 40V N Channel __A 0.87m Ohm in Dualcool56 package

Obsolete

Overview

This N-Channel MOSFET is produced using onsemi’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

  • Synchronous Rectifier in AC-DC and DC-DC power supplies
  • Motor Switch
  • Load switch

  • Power Supplies
  • Motor control
  • Solar Inverters
  • Motor Control

  • Top and bottom sided exposed in standard 5x6mm pin-out
  • Ultra low RDS-on
  • Reduced capacitances and package inductance

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTMFSC0D9N04C

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Obsolete

CAD Model

Pb

A

H

P

DFN-8

1

260

-

-

N

N-Channel

PowerTrench® T1

Power 56 Dual Cool

Low-Medium Voltage

Standard

0

Single

0

40

0.87

20

3.5

310

4.1

-

-

-

86

6100

14

159

3400

70

Price N/A

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