N-Channel Shielded Gate PowerTrench® MOSFET 100V, 142A, 3.2mΩ

Overview

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss.

  • This product is general usage and suitable for many different applications.
  • Isolated DC-DC primary switches
  • AC-DC Synchronous Rectification
  • High Switching Frequency Synchronous Buck

  • Power Supplies
  • Motor Drive

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 50 A
  • Max rDS(on) = 5.8 mΩ at VGS = 6 V, ID = 30.5 A
  • 50% lower Qrr than other MOSFET suppliers
  • Lowers switching noise/EMI
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant
  • Very Low RDS*Qoss

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTMFS3D2N10MDT1G

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Active

CAD Model

Pb

A

H

P

DFN5 5x6, 1.27P (SO−8FL)

1

260

REEL

1500

Y

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

100

3.5

20

4

142

155

~NA~

~NA~

~NA~

48

3900

~NA~

74

1100

24

$1.335

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