MOSFET - Power, Single, N-Channel, PQFN8, 100V, 10.8mΩ, 83A

Overview

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

  • Converters
  • Power Supplies
  • 48V Hot Swap
  • 48V Telecom equipment
  • 48V Server equipment
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 10.8 mΩ at VGS = 10 V, ID = 83 A
  • Small Footprint (5 x 6 mm) for Compact Design
  • Low RDS(on) to Minimize Conduction Losses
  • Wide SOA
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTMFS010N10GTWG

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

No

N-Channel

PowerTrench® T8

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

Wide SOA

Single

0

100

10.8

20

4

83

150

~NA~

~NA~

~NA~

58.5

3950

~NA~

147

430

60

$1.1275

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