N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 50 A, 15 mΩ

Obsolete

Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

  • Synchronous Rectifier in secondary of power supply

  • Power Supply
  • Motor Control

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 15 mΩ at VGS = 10 V, ID = 27 A
  • 100% UIL tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTDS015N15MC

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

-

-

REEL

2500

N

N-Channel

PowerTrench® T1

NA

Low-Medium Voltage

Standard

0

Single

0

150

15

20

4.5

50

3.8

-

-

-

27

2120

4

197

595

10.5

Price N/A

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