Power MOSFET 30 V 75 A 8 mOhm Single N-Channel D2PAK

Obsolete

Overview

This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. This power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The drain-to-source diode has a ideal fast but soft recovery.

  • Power Supplies
  • Inductive Loads
  • PWM Motor Controls
  • Replaces MTP1306 and MTB1306 in Many Applications

  • Ultra-Low RDS(on), Single Base, Advanced Technology
  • SPICE Parameters Available
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperatures
  • High Avalanche Energy Specified
  • ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
  • Pb-Free Packages are Available

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2

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTB75N03-006

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Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

235

TUBE

50

N

N-Channel

PowerTrench® T1

NA

Low-Medium Voltage

Standard

0

Single

0

30

-

-

-

75

150

-

-

-

-

-

-

-

-

-

Price N/A

More Details

NTB75N03-6G

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Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

260

TUBE

50

N

N-Channel

PowerTrench® T1

NA

Low-Medium Voltage

Standard

0

Single

0

30

-

-

-

75

150

-

-

-

-

-

-

-

-

-

Price N/A

More Details

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