Single N-Channel Power MOSFET 250V, 10A, 420mΩ

Obsolete

Overview

This N-Channel Power MOSFET is produced using onsemi’s trench technology, which is specifically designed to minimize input capacitance and gate charge. This devices is suitable for applications with low gate charge driving requirements.

  • Battery Protection
  • Motor Drive
  • Primary Side Switch
  • Secondary Side Synchronous Rectification

  • Multi-Cells Battery Pack (ESS, E-Bike, P-Tool)
  • Other Motor
  • Power Supply

  • High Speed Switching
  • ESD Diode-Protected Gate
  • Low Gate Charge
  • 100% Avalanche Tested
  • Pb-Free, Halogen Free and RoHS Compliance

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDDP010N25AZT4H

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

700

N

N-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Standard

0

Single

0

250

420

30

4.5

10

52

-

-

-

16

980

-

540

80

25

Price N/A

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