Low/Medium Voltage MOSFETs | MLP2N06CL

62 V, 2.0 A Power MOSFET, Logic Level

Obsolete

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Overview

This logic level power MOSFET features current limiting for short circuit protection, integrated Gate-Source clamping for ESD protection and integral Gate-Drain clamping for over-voltage protection and technology for low on-resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition.

The internal Gate-Source and Gate-Drain clamps allow the device to be applied without use of external transient suppression components. The Gate-Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate-Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature.

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

MLP2N06CL

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

N-Channel

PowerTrench® T1

NA

Low-Medium Voltage

Standard

0

Single

0

62

-

-

-

2

40

-

-

-

-

-

-

-

-

-

Price N/A

More Details

MLP2N06CLG

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

N-Channel

PowerTrench® T1

NA

Low-Medium Voltage

Standard

0

Single

0

62

-

-

-

2

40

-

-

-

-

-

-

-

-

-

Price N/A

More Details

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