-100V, -6.6A, 530mΩ, DPAK P-Channel QFET®

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Overview

These P-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

  • Power Train

  • 6.6A, -100V, RDS(on) = 0.53O @VGS = -10 V
  • Low gate charge ( typical 12 nC)
  • Low Crss ( typical 30 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • Qualified to AEC Q101
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQD8P10TM-F085

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

P-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Standard

0

Single

0

-100

530

±30

-4

-6.6

44

-

-

-

12

360

6.4

350

120

30

$0.7109

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