Low/Medium Voltage MOSFETs | FDMS86300DC

N-Channel Dual CoolTM 56 PowerTrench® MOSFET 80V, 110A, 3.1mΩ

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

  • AC-DC Merchant Power Supply

  • Dual Cool™ Top Side Cooling PQFN package
  • Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A
  • Max rDS(on) = 4.0 mΩ at VGS = 8 V, ID = 21 A
  • High performance technology for extremely low rDS(on)
  • 100% UIL Tested
  • RoHS Compliant

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MSL Temp (°C)

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Channel Polarity

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Package Name

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Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

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Reference Price

FDMS86300DC

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CAD Model

Pb

A

H

P

DFN-8

506EG

1

260

REEL

3000

Y

N-Channel

PowerTrench® T6

Power 56 Dual Cool

Low-Medium Voltage

Standard

0

Single

0

80

3.1

±20

4.5

110

125

-

-

-

59

5265

14

42

929

21

$1.1416

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Reliability Data

Die Related Summary Data

Device: FDMS86300DC

Equivalent to wafer fab process: T9

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

T9

0

1733101746

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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