N-Channel Power Trench® MOSFET 100V, 16.5A, 56mΩ

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

  • DC-DC Merchant Power Supply

  • Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.8 A
  • Max rDS(on) = 88 mΩ at VGS = 6 V, ID = 3.9 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • 100% UIL Tested
  • Termination is Lead-free and RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS8622

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

100

56

±20

4

16.5

31

-

-

10

2.8

301

1.3

30

70

3.6

$0.2997

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