Low/Medium Voltage MOSFETs | FDMS86200

N-Channel Power Trench® MOSFET 150V, 35A, 18mΩ

Active

Similar Products

Datasheet

Buy

Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

  • This product is general usage and suitable for many different applications.

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A
  • Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

Tools and Resources

Product services, tools and other useful resources related to FDMS86200

CAD Model

CAD Model

Material Composition

Product Change Notification

Reliability Data

Buy/Parametrics Table

Search

Close Search

Products:

1

Share

Sort by

Product Groups:

┗

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS86200

Loading...

Active

CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

150

18

±20

4

35

104

-

-

-

18

2041

7.7

113

203

10

$0.957

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.

Reliability Data

Die Related Summary Data

Device: FDMS86200

Equivalent to wafer fab process: T7

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

T7

11

3294609671

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

New Search