Low/Medium Voltage MOSFETs | FDMS86163P

P-Channel PowerTrench® MOSFET -100V, -50A, 22mΩ

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Overview

This P-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

  • Mobile Comm Infrastructure

  • Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A
  • Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A
  • Very low RDS(on) mid voltage P-channel silicon technology optimised for low Qg
  • This product is optimised for fast switching applications as well as load switch applications
  • 100% UIL tested
  • RoHS Compliant

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Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

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Reference Price

FDMS86163P

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CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

Y

P-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

-100

22

±25

-4

-50

104

-

-

-

26

3070

7.1

132

501

21

$1.131

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Reliability Data

Die Related Summary Data

Device: FDMS86163P

Equivalent to wafer fab process: T7

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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