Low/Medium Voltage MOSFETs | FDMS8570S

N-Channel PowerTrench® SyncFET™ 25V, 60A, 2.8mΩ

Obsolete

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Overview

This N-Channel SyncFET™ is produced using onsemi Semiconductor’s advanced PowerTrench® process.Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.

  • Server

  • Maximum RDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A
  • Maximum RDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A
  • High-Performance Technology for Extremely Low RDS(on)
  • SyncFET™ Schottky Body Diode
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS8570S

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

NA

Low-Medium Voltage

Logic

0

Single

0

25

2.8

12

2.2

60

48

-

3.1

-

22

2825

-

-

-

-

Price N/A

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