N-Channel PowerTrench® MOSFET 40V, 76A, 3.1mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.

  • Consumer

  • Max RDS(on) = 3.1 mΩ at VGS = 10 V, ID = 22 A
  • Max RDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS8333L

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

40

3.1

±20

3

76

69

-

4.3

-

46

3245

5.5

20

840

32

$0.3273

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